Technology of experimental samples preparation
Technology of experimental samples preparation - examples


Any picture can be magnified by clicking on.

 

Design of topology for photographic masks


Examples of photomasks design:
van der Pauw type structures - left,   test of HEMT heterostructures - middle,   contact structures - right:

design - #1   design - #2   design - #3

 

 

Lithography of structures


A set of HEMT transistors and test elements on GaAs/GaAlAs ( MBE) heterostructures - left (diameter of the contacting wire   = 25 µm ),   detail of the II-V cell - center,   channel region of the II-II cell - right :
HEMT structures - 1 HEMT structures - 2 HEMT structures - 3



Here more about HEMTs and RTDs.

 

RTD & HEMT matrix A matrix of resonant-tunnelling diodes (RTDs) and transistors (HEMTs) on the same heterostructures (square expanded contacts side length = 100 µm  ).





 

 





Interdigital contact structures on diamond layers (length of the side of the contact square areas   = 100 µm  ):
interdigital contact structures - 1     interdigital contact structures - 2


 

Structures for Hall effect measurements (width of the horizontal gate stripe   = 400 µm  ) - left,
detail of the source region - right:
Hall structures - 1 Hall structures - 2


 

Semiconductor chip comprising a set of photo diodes - left, detail of the central diode - right
(diameter of the contacting wire   = 30 µm  ):
set of photo diodes - 3     detail of the photo diode - 4


 

RTD samples prepared on GaAs/GaAlAs heterostructures - left,
detail of the contacted structures - right   (length of the side of the contact square areas   = 100 µm  ):
GaAs/GaAlAs - 1 GaAs/GaAlAs - 2


 

Microstructures based on sputtered piezoresistive layers on silicon substrates:
a part of 4" Si wafer under preparation - left,   diced chips of deformation sensors - right
Si wafer with chips   diced sensor chips


More about the microsensor structures here.

 

 

 

Mounted samples


Wired structures in packages designed for their experimental study:

structures for Hall-effect measurements (ceramic chip-carrier package - CCC18) - left,
semiconductor photo diodes (ceramic DIP16 package) - middle,
RTD structures (CCC20 package) - right:
CCC 18   Dual-In-Plane 16   CCC 20



Floating assembly of a deformation-microsensor silicon chip - right,
detail of the adjusted microsensor chip structure - left,   (width of the chip  = 2.5 mm  ):
deformation-microsensor Si chip   floating assembly of the chip



Samples prepared for high-frequency measurements:
RTD assembled - top left,  detail of the bonded RTD chip - right (expanded contacts side length  = 100 µm  ),
reference commercial HEMT assembly - 2nd row:
 
RTD assembled   detail of RTD chip  
HEMT assembled



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Last updated: Apr 23, 2004

 

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