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Ferromagnetic Semiconductor Spintronics Web Project
This web page is an attempt to facilitate comparison between theory and experiment to advance understanding of ferromagnetism in diluted magnetic semiconductors, particularly (III,Mn)V and (II,Mn)VI materials.
The aim of this web page is to establish a convenient mechanism for information flow between theory and experiment. The pages are organized on a request -> answer basis and include brief remarks, a database of theoretical data, and links to some recent publications and preprints.
The MS on Web Project is an outgrowth of a volunteer effort of theorists listed under the
link and their
. It covers only a small part of scientific activities in this rapidely developing field of research. Comments and suggestions from users will be important in determining how the web page evolves and are very much appreciated. At the same time we kindly ask that users not present the posted data and figures in public without contacting us.
Currently, we have data available for several physical quantities in bulk (epilayer) (III,Mn)V ferromagnets. The theoretical approaches we employ assume
Mn local moments and electrons in the valence band of the semiconductor as the low-energy degrees of freedom in these systems. Ferromagnetism is modelled using simplifying approximations, including a mean-field approximation, a non-interacting spin-wave approximation, and a virtual-crystal or continuum Mn approximation. Merit of these approximations is that they allow predictions of a number of magnetic properties of many different MS systems. The main deficiency, on the other hand, is in neglecting the role of disorder in these heavily doped semiconductors. We intend to continously expand our database by including more physical quantities (work on DC and AC conductivity is near completion) and more magnetic semiconductor systems (quantum wells and digital-doped MS's). The work will also go beyond some of the simplifying approximations, namely to account for the random distribution of Mn ions and other unintentional impurities.